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11 March 1987 Fundamental Aspects Of Pulsed-Laser Irradiation Of Semiconductors
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Proceedings Volume 0710, Excimer Lasers and Optics; (1987) https://doi.org/10.1117/12.937293
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
Fundamental aspects of pulsed laser melting and solidification of crystalline silicon and germanium are reviewed. The discussion concentrates on time-resolved experiments performed with nanosecond pulsed lasers, although some picosecond and femtosecond experiments are also considered. The creation of amorphous material from crystalline material induced by ultrarapid melting and resolidification using either nanosecond or picosecond lasers is surveyed and the inverse process of recrystallization of a-Si by explosive crystallization is described. Finally, melting model calculations, which have proven to give a very accurate description of the pulsed laser irradiation process, are discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. E. Jellison Jr., D. H. Lowndes, and R. F. Wood "Fundamental Aspects Of Pulsed-Laser Irradiation Of Semiconductors", Proc. SPIE 0710, Excimer Lasers and Optics, (11 March 1987); https://doi.org/10.1117/12.937293
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