Paper
11 March 1987 Studies Of Excimer Laser Etching Mechanism Using Laser Induced Fluorescence Measurements
R. W. Dreyfus, Roger Kelly, R. E. Walkup, R. Srinivasan
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Proceedings Volume 0710, Excimer Lasers and Optics; (1987) https://doi.org/10.1117/12.937296
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
Bombarding solid surfaces with intense 248 nm KrF* or 193 nm ArF* excimer lasers leads to rapid etching. The ejected material consists of atoms, diatomics and larger clusters. Using laser fluences near threshold so as to minimize perturbations due to gas-phase collisions and to laser-produced plasma, the energy distributions of the first two types of species were measured by laser-induced fluorescence (LIF). The species detected were Al, A10, C2 and CN. The results show that for a metallic-like material (graphite) the energies agree with a purely thermal mechanism for the vaporization. In distinct contrast to this, insulating materials (sapphire and polymers) display nonthermal energy distributions and point to a photochemical (bond-breaking) mechanism. Understanding these mechanisms is of interest to microelectronic circuit production techniques, to optical damage prevention, and to laser surgery.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. W. Dreyfus, Roger Kelly, R. E. Walkup, and R. Srinivasan "Studies Of Excimer Laser Etching Mechanism Using Laser Induced Fluorescence Measurements", Proc. SPIE 0710, Excimer Lasers and Optics, (11 March 1987); https://doi.org/10.1117/12.937296
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Cited by 11 scholarly publications.
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KEYWORDS
Etching

Aluminum

Laser induced fluorescence

Plasma

Chemical species

Excimer lasers

Luminescence

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