Reactively sputtered aluminium nitride films for spectral emission control

S. Zhao; C.-G. Ribbing

doi:10.1117/12.797068

25 September 2008 Reactively sputtered aluminium nitride films for spectral emission control

S. Zhao, C.-G. Ribbing

Proceedings Volume 7101, Advances in Optical Thin Films III; 71011F (2008) https://doi.org/10.1117/12.797068
Event: Optical Systems Design, 2008, Glasgow, Scotland, United Kingdom

Abstract

Aluminium nitride films, 0.8-1.8 μm thick, have been deposited by reactive, magnetron sputtring of aluminium in an argon-nitrogen atmosphere. The sputtered films exhibit a Reststrahlen band in the wavelength range 11-16 μm. We have investigated the possibilities to use different substrate materials and dielectric coatings to extend this interval to the entire upper thermal window 8-13 μm and a secondary interference maximum in the 3-5 μm range, i.e. the lower thermal window. Our results indicate a potential for the use of AlN-films in applications that benefit from wavelength selective emittance, e.g. IR signature control and frost prevention.

Citation Download Citation

S. Zhao and C.-G. Ribbing "Reactively sputtered aluminium nitride films for spectral emission control", Proc. SPIE 7101, Advances in Optical Thin Films III, 71011F (25 September 2008); https://doi.org/10.1117/12.797068

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