26 September 2008 Laser induced fluorescence and absorption measurements for DUV optical thin film characterization
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Residual absorption in optical thin films due to impurities or defects causes thermal lens formation upon high power DUV laser irradiation. Furthermore, it may be one reason for functional degradation during prolonged laser irradiation. Pulsed ArF laser induced fluorescence (LIF) and direct absorption measurements (LID technique) are applied to investigate high reflecting coatings made from LaF3, MgF2 and AlF3 with respect to the influence of different raw materials and deposition temperatures. LIF measurements reveal emission bands that are partially attributed to certain impurities or defects which either origin from the raw material or the coating process. In addition, LIF measurements of single MgF2 and LaF3 layers are performed to investigate different raw material qualities and coating processes. The experimental results show the potential of both techniques for sensitive accompanying of coating process development.
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Ch. Mühlig, Ch. Mühlig, W. Triebel, W. Triebel, S. Kufert, S. Kufert, S. Bublitz, S. Bublitz, "Laser induced fluorescence and absorption measurements for DUV optical thin film characterization", Proc. SPIE 7101, Advances in Optical Thin Films III, 71011R (26 September 2008); doi: 10.1117/12.797676; https://doi.org/10.1117/12.797676

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