2 October 2008 Low noise InAs avalanche photodiodes for high sensitivity FPAs
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Abstract
We report on studies of avalanche multiplication in InAs APDs. A range of p-i-n and n-i-p photodiodes have been characterised with both avalanche multiplication and the accompanying excess noise being measured. By using a number of laser wavelengths the injection of optically generated carriers into the multiplication region has been varied, allowing the relative magnitude of the ionisation coefficients to be determined. The results of multiplication measurements show that, contradictory to the only other published experimental results for InAs, the electron ionisation coefficient is much greater than the hole ionisation coefficient. This large ionisation coefficient ratio should result in low excess multiplication noise for electron initiated gain, a prediction which has been confirmed by the measurement of multiplied photocurrent noise. The excess noise measured on InAs APDs was extremely low, unlike that reported for other wider bandgap III-Vs, and comparable with that measured on so called electron APDs fabricated from HgCdTe. These characteristics make InAs an interesting option for the fabrication of high sensitivity APD focal plane arrays in the III-V material system.
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Andrew R. J. Marshall, Chee Hing Tan, Matthew J. Steer, John P. R. David, "Low noise InAs avalanche photodiodes for high sensitivity FPAs", Proc. SPIE 7113, Electro-Optical and Infrared Systems: Technology and Applications V, 71130H (2 October 2008); doi: 10.1117/12.799846; https://doi.org/10.1117/12.799846
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