17 October 2008 Study of second-generation Proximity Gap Suction Development System (PGSD-II) for mask fabrication
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Abstract
Development process for 3x nm node devices and beyond is becoming a great issue in mask fabrication. The following items, such as uniformity, repeatability, loading effect and defect must be improved. To evolve the development process, TEL, DNP Omron and Toshiba have been jointly developed next generation equipment which is called "Second-generation PGSD (Gen.2)". In this paper, PGSD Gen.2 concept is introduced and its performance is reported.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Sakurai, Hideaki Sakurai, Masatoshi Terayama, Masatoshi Terayama, Mari Sakai, Mari Sakai, Masamitsu Itoh, Masamitsu Itoh, Osamu Ikenaga, Osamu Ikenaga, Hideo Funakoshi, Hideo Funakoshi, Norifumi Sato, Norifumi Sato, Kenji Nakamizo, Kenji Nakamizo, Masato Nomura, Masato Nomura, Yoshihiko Saito, Yoshihiko Saito, Junji Nakao, Junji Nakao, Naoya Hayashi, Naoya Hayashi, } "Study of second-generation Proximity Gap Suction Development System (PGSD-II) for mask fabrication", Proc. SPIE 7122, Photomask Technology 2008, 71220D (17 October 2008); doi: 10.1117/12.801424; https://doi.org/10.1117/12.801424
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