17 October 2008 Integrating Cr and MoSi etch for optimal photomask critical dimension uniformity and phase uniformity
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Abstract
Two key parameters of attenuated phase shift masks are critical dimension uniformity (CDU) and phase uniformity. This study examines the important role that plasma etch plays in determining these parameters. For optimal results, the impact which Cr and MoSi etch have on uniformity must be understood not only individually, but also as a complementary pair. A two-step MoSi etch was developed; the first step was tuned to have a higher etch bias at the edge than at the center, while the second step had a very uniform etch bias. By controlling the fraction of the MoSi consumed by each step, the MoSi etch was adapted to complement the Cr etch and thus optimize overall CDU and phase uniformity.
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Richard Wistrom, Toru Komizo, Satoru Nemoto, A. Gary Reid, "Integrating Cr and MoSi etch for optimal photomask critical dimension uniformity and phase uniformity", Proc. SPIE 7122, Photomask Technology 2008, 71220F (17 October 2008); doi: 10.1117/12.801570; https://doi.org/10.1117/12.801570
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