17 October 2008 Mask defect printability in the spacer patterning process
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We studied the mask defect printability for both opaque and clear defects in the spacer patterning process. The spacer patterning process consists of the development of photoresist film, the etching of the core film using the photoresist pattern as the etching mask, the deposition of a spacer film on both sides of the core film pattern, and the removal of the core film. The pattern pitch of the spacer film becomes half that of the photoresist. The opaque defect and the clear defect of the mask, respectively, resulted in an "open-short complex" defect and a short defect in the spacer pattern, The defect size of both the opaque and clear defect became smaller as the process proceeded from the development to the core film etching and the spacer pattern fabrication. The decrease of the mask defect printability during the spacer process is likely to be related to the reduction of the line width roughness (LWR) and to the reduction of mask enhanced factor (MEF). The acceptable mask defect size was also studied from the viewpoint of the defect printability to the spacer pattern for both the opaque and clear defect, and found to be 55-60nm, which was relaxed from that in ITRS2007.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiro Miyoshi, Seiro Miyoshi, Shinji Yamaguchi, Shinji Yamaguchi, Takashi Hirano, Takashi Hirano, Hiromitsu Mashita, Hiromitsu Mashita, Hidefumi Mukai, Hidefumi Mukai, Ayumi Kobiki, Ayumi Kobiki, Yuuji Kobayashi, Yuuji Kobayashi, Kohji Hashimoto, Kohji Hashimoto, Soichi Inoue, Soichi Inoue, } "Mask defect printability in the spacer patterning process", Proc. SPIE 7122, Photomask Technology 2008, 71220P (17 October 2008); doi: 10.1117/12.801410; https://doi.org/10.1117/12.801410

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