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17 October 2008 Pixel-based SRAF implementation for 32nm lithography process
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Abstract
A Pixel-based sub-resolution assist feature (SRAF) insertion technique has been considered as one of the promising solutions by maximizing the common process window. However, process window improvement of the pixel-based SRAF technique is limited by the simplification of SRAFs for mask manufacturability. Mask simplification and mask rule check (MRC) constraints parameters for pixel-based SRAF technique are the critical factors for mask production without a big loss of its benefit. In this study, correlation of MRC control was analyzed in terms of the robustness to process variation for a contact layer of 32nm device node. An optimum condition of MRC constraints was selected by balancing the process window and mask manufacturability. In addition, a novel and practical methodology for 32nm device node development was proposed to keep the mask complexity low and to take full advantage of process window improvement using pixel-base SRAF insertion.
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Byung-Sung Kim, Yoo-Hyun Kim, Sung-Ho Lee, Sung-Il Kim, Sang-Rok Ha, Juhwan Kim, and Alexander Tritchkov "Pixel-based SRAF implementation for 32nm lithography process", Proc. SPIE 7122, Photomask Technology 2008, 71220T (17 October 2008); https://doi.org/10.1117/12.801310
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