Translator Disclaimer
17 October 2008 Simulation-based EUV source and mask optimization
Author Affiliations +
Source and mask optimization has become a promising technique to push the limits of 193 nm immersion lithography. As the introduction of EUV lithography is at least delayed to the 22 nm technology node, sophisticated resolution enhancement techniques will already be required at a very early stage. Thus, pinpointing ideal mask layouts, mask materials, and illumination settings are as important aspects for EUV as for optical lithography. In this paper, we propose the application of global optimization techniques to identify appropriate process conditions for EUV lithography, using rigorous mask and imaging simulations.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tim Fühner, Andreas Erdmann, and Peter Evanschitzky "Simulation-based EUV source and mask optimization", Proc. SPIE 7122, Photomask Technology 2008, 71221Y (17 October 2008);


Mask shadowing and the line-edge transfer function
Proceedings of SPIE (March 22 2012)
Evaluation of defect repair of EUV mask absorber layer
Proceedings of SPIE (June 27 2005)
EUVL mask fabrication for the 45-nm node
Proceedings of SPIE (July 31 2002)
TaN EUVL mask fabrication and characterization
Proceedings of SPIE (August 19 2001)

Back to Top