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17 October 2008 Pattern placement correction due to bending in EUVL masks
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Extreme Ultraviolet Lithography (EUVL) masks have residual stress induced by several thin films on low thermal expansion material (LTEM) substrates. The stressed thin films finally result in convex out-of-plane displacement (OPD) of several 100s of nm on the pattern side of the mask. Since EUVL masks are chucked on EUVL scanners differently from on e-beam writer, the mask pattern placement errors (PPE) are necessary to be corrected for to reduce overlay errors. In this paper, experimental results of pattern placement error correction using standard chrome on glass (COG) plate will be discussed together with simulations. Excellent agreement with simple bending theory is obtained. Suitability of the model to compensate for other EUVL-related PPEs due to mask non-flatness will be discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seh-Jin Park, Chandhok Manish, Marilyn Kamna, Chuan Hu, Guojing Zhang, Fabian C. Martinez, Nathan Wilcox, Kamgmin Hsia, and Alan R. Stivers "Pattern placement correction due to bending in EUVL masks", Proc. SPIE 7122, Photomask Technology 2008, 71222C (17 October 2008); doi: 10.1117/12.801542;


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