20 October 2008 Mask patterning for the 22nm node using a proton multi-beam projection pattern generator
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Abstract
Decreasing throughput of high-end pattern generators and insufficient line edge roughness (LER) of chemically amplified resists (CAR) might become limitations for future mask making. An alternative could be the introduction of less sensitive resists, linked to a turning away from today's electron beam pattern generators. Moderate exposure doses of around 25μC/cm2 could be achieved for non-CAR materials like HSQ by the use of 10keV protons. Targeting optimized absorber performance, Shin-Etsu has developed an Opaque-molybdenum-over-glass (OMOG) material, designed for 32mn mask technology and beyond. This hard mask concept allows using thin resist layers, as required by an ion beam exposure. Goal of this work was to assess a HSQ based non-CAR process using a multiple ion beam pattern generator including subsequent transfer into the absorber by dry etch processes. Proton exposures have been done on the IMS Nanofabrication proof of concept tool which is designed for 40,000 programmable ion beams. For comparison, an electron based reference process has been set up in parallel to the proton multi-beam approach. Hard mask opening and subsequent absorber etching have been accomplished in a state of the art mask etcher. Assessment of the process flow has been done in terms of feature profile, LER and resolution capability.
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Joerg Butschke, Joerg Butschke, Mathias Irmscher, Mathias Irmscher, Holger Sailer, Holger Sailer, Lorenz Nedelmann, Lorenz Nedelmann, Marcus Pritschow, Marcus Pritschow, Hans Loeschner, Hans Loeschner, Elmar Platzgummer, Elmar Platzgummer, } "Mask patterning for the 22nm node using a proton multi-beam projection pattern generator", Proc. SPIE 7122, Photomask Technology 2008, 712236 (20 October 2008); doi: 10.1117/12.801402; https://doi.org/10.1117/12.801402
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