Paper
17 October 2008 70nm DRAM intra-field CDU improvement by dose modulation on mask transmittance
Tomas Chin, Wen Bin Wu, Chiang Lin Shih, Pei Cheng Fan, Guy Ben Zvi
Author Affiliations +
Abstract
DRAM intra-field CD uniformity (CDU) demand becomes more crucial with pattern size shrink and wafer die or memory size expanding. Intra-field CDU error mainly comes from mask CD error, scanner exposure and wafer process. This study makes use of a method to extract systematic CDU error from multi-field CDU results. Based on the information of the systematic CDU error, localized mask transmittance modulation is implemented to compensate the intra-field systematic CDU error on wafer. A focused ultrafast laser beam forms shading elements in mask quartz substrate. Mask transmittance modulation is controlled by the shading element density variation. This study will demonstrate the intra-field CDU improvement result, CD modulation calibration validity, CD proximity variation result and mask inspection result etc.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomas Chin, Wen Bin Wu, Chiang Lin Shih, Pei Cheng Fan, and Guy Ben Zvi "70nm DRAM intra-field CDU improvement by dose modulation on mask transmittance", Proc. SPIE 7122, Photomask Technology 2008, 712238 (17 October 2008); https://doi.org/10.1117/12.801417
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Critical dimension metrology

Transmittance

Modulation

Calibration

Semiconducting wafers

Reticles

RELATED CONTENT


Back to Top