17 October 2008 Effects of photo resist erosion in development on critical dimension performance for 45nm node and below
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Abstract
In previous study, it has been reported that photo resist erosion after development gets severe as patterns size decreases. The 60nm feature requiring for SRAF(Sub Resolution Assistant Feature) of 45nm technology node, the photo resist erosion after develop on unexposed area was almost 400Å. It will be a serious problem to degrade not only the resist thickness margin for thinner resist to enhance resolution and pattern collapse, but also CD(Critical Dimension) performance capability such as CD linearity and SRAF resolution capability by proceeding dry etching. In this paper, the effects of photo resist erosion by pattern size on CD linearity performance were studied. The photo resist erosion by pattern size was simulated with the Gaussian blur model before dry etching. The effects of dosage, PEB(Post Exposure Bake) temperature and development conditions were evaluated to reduce blur value before dry etching.
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Guen-Ho Hwang, Guen-Ho Hwang, Dong-Hyun Kim, Dong-Hyun Kim, Chu-bong Yu, Chu-bong Yu, Byeng-Sun Kang, Byeng-Sun Kang, Ik-Boum Hur, Ik-Boum Hur, Cheol Shin, Cheol Shin, Sung-Mo Jung, Sung-Mo Jung, Sang-Soo Choi, Sang-Soo Choi, } "Effects of photo resist erosion in development on critical dimension performance for 45nm node and below", Proc. SPIE 7122, Photomask Technology 2008, 71223A (17 October 2008); doi: 10.1117/12.802741; https://doi.org/10.1117/12.802741
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