17 October 2008 Study of influence to transistor properties on the change of OPC pattern
Author Affiliations +
Abstract
Slight change of OPC pattern shape may influence transistor characteristics. So inputting the result of Litho- Simulation, Contour, to SPICE-simulator, we investigated the change of the transistor characteristic. First of all, we investigated the sensitivity of the transistor characteristics to OPC pattern change. We found that the difference of shape with Isolated, Dense pattern, and a different OPC tool caused difference after SPICE-simulation. In this investigation, we report focusing on the transient and DC analysis of transistor characteristics. Contour data was measured and averaged before input to SPICE and a change of transistor characteristic was able to be detected. We came to the conclusion that this investigation method is effective to check the influence of the transistor characteristics due to OPC pattern change. And we can adopt this method as one technique for deciding the applicability of the OPC tool and its upgrade, which were issues for MASK data processing.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuya Sugawa, Kazuya Sugawa, Norimasa Nagase, Norimasa Nagase, Takahisa Itoh, Takahisa Itoh, Mitsuo Sakurai, Mitsuo Sakurai, Tomoyuki Okada, Tomoyuki Okada, } "Study of influence to transistor properties on the change of OPC pattern", Proc. SPIE 7122, Photomask Technology 2008, 71223T (17 October 2008); doi: 10.1117/12.801547; https://doi.org/10.1117/12.801547
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Unified mask data formats for EB writers
Proceedings of SPIE (August 27 2003)
Design-friendly DFM rule
Proceedings of SPIE (March 12 2006)
A study of EB pattern write system design for 22...
Proceedings of SPIE (May 14 2007)
Delay-bound determination for path constraint satisfaction
Proceedings of SPIE (October 23 2000)

Back to Top