19 March 2009 Static recording properties of super-resolution near-field structure with antimony bismuth mask layer
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Proceedings Volume 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage; 71250K (2009) https://doi.org/10.1117/12.823390
Event: Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 2008, Wuhan, China
Abstract
Super-resolution near-field structures (super-RENS) with antimony bismuth mask layer (Sb1-xBix, X =0, 0.1, 0.2 and 0.9) were fabricated by magnetron sputtering. AgInSbTe and ZnS-SiO2 were used as recording layer and dielectric layer respectively. Static recording tests with and without super-RENS were carried out using static recording tester whose laser wavelength is 406.7 and numerical aperture is 0.8. The recorded marks were observed by atomic force microscopy (AFM). The influences of Bi proportion in the films on the super-resolution recording properties were investigated.
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Laixin Jiang, Laixin Jiang, Yiqun Wu, Yiqun Wu, Yang Wang, Yang Wang, Jingsong Wei, Jingsong Wei, Fuxi Gan, Fuxi Gan, "Static recording properties of super-resolution near-field structure with antimony bismuth mask layer", Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71250K (19 March 2009); doi: 10.1117/12.823390; https://doi.org/10.1117/12.823390
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