19 March 2009 Micromagnetic simulation of microwave assisted switching in Ni80Fe20 thin film element
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Proceedings Volume 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage; 71250O (2009) https://doi.org/10.1117/12.822624
Event: Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 2008, Wuhan, China
Abstract
The authors demonstrate microwave assisted switching process of Ni80Fe20 thin film element with micromagnetics. Effects of microwave amplitude and frequency on the magnetization reversal were focused. Numerical results showed that the coercivity of Ni80Fe20 thin film element can be reduced by the modification of the microwave field, and the most evident reduction of coercivity was found at resonance frequencies. Considerable Fluctuations of switching fields are found at the natural resonance frequencies and high microwave amplitudes, which can be explained by scattering of nucleation sites induced by the thermal effect of the microwave filed.
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Peng Li, Peng Li, Xiaofei Yang, Xiaofei Yang, Xiaomin Cheng, Xiaomin Cheng, } "Micromagnetic simulation of microwave assisted switching in Ni80Fe20 thin film element", Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71250O (19 March 2009); doi: 10.1117/12.822624; https://doi.org/10.1117/12.822624
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