19 March 2009 Laser-induced structural, electrical, and optical properties evolution of phase change Ge2Sb2Te5 thin films
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Proceedings Volume 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage; 71251U (2009) https://doi.org/10.1117/12.825762
Event: Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 2008, Wuhan, China
Abstract
Sheet resistance of laser-irradiated Ge2Sb2Te5 films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance underwent an abrupt change of four orders of magnitude (107→103 Ω/sq) at about 580mW , x-ray diffraction studies of the three samples before, at and after the abrupt point revealed the phase change process of the Ge2Sb2Te5 thin films from amorphous to crystal states. Optical constants of the three samples were measured by ellipsometry. Based on the experimental results, the relationship between the electrical / optical properties and the structure of the Ge2Sb2Te5 thin films is discussed and it is shown that optical-electrical hybrid data storage may be realized using optical writing and electrical reading.
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Huajun Sun, Huajun Sun, Lisong Hou, Lisong Hou, Yiqun Wu, Yiqun Wu, } "Laser-induced structural, electrical, and optical properties evolution of phase change Ge2Sb2Te5 thin films", Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71251U (19 March 2009); doi: 10.1117/12.825762; https://doi.org/10.1117/12.825762
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