Phase transition kinetics of Sb2Te3 phase change thin films

Fengxiao Zhai; Yang Wang; Yiqun Wu; Fuxi Gan

doi:10.1117/12.823426

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19 March 2009 Phase transition kinetics of Sb₂Te₃ phase change thin films

Fengxiao Zhai, Yang Wang, Yiqun Wu, Fuxi Gan

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Proceedings Volume 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage; 71251W (2009) https://doi.org/10.1117/12.823426
Event: Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 2008, Wuhan, China

Abstract

Phase transition kinetics of Sb₂Te₃ phase change thin films was investigated in this paper. Sb₂Te₃ thin films, with thickness of ~100nm, were deposited on K9 glass substrates by DC magnetron sputtering with an alloy target. The crystallization kinetics of Sb₂Te₃ thin films under isothermal and non-isothermal annealing was analyzed by a home-made in situ temperature-dependent reflectivity tester. From the heating rate dependences of phase transition temperatures, the activation energy was derived. The obtained values of the Avrami indexes indicate that a two dimension growth crystallization mechanism is responsible for the amorphous-crystalline transformation of Sb₂Te₃ phase change thin films. Although phase transition of Sb₂Te₃ thin film is confirmed to be continuous in a larger temperature range, but short laser pulse can easily trigger its crystallization process and form clear and confined crystalline marks.

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Fengxiao Zhai, Yang Wang, Yiqun Wu, and Fuxi Gan "Phase transition kinetics of Sb₂Te₃ phase change thin films", Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71251W (19 March 2009); https://doi.org/10.1117/12.823426

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