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19 March 2009 Phase transition kinetics of Sb2Te3 phase change thin films
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Proceedings Volume 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage; 71251W (2009) https://doi.org/10.1117/12.823426
Event: Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 2008, Wuhan, China
Abstract
Phase transition kinetics of Sb2Te3 phase change thin films was investigated in this paper. Sb2Te3 thin films, with thickness of ~100nm, were deposited on K9 glass substrates by DC magnetron sputtering with an alloy target. The crystallization kinetics of Sb2Te3 thin films under isothermal and non-isothermal annealing was analyzed by a home-made in situ temperature-dependent reflectivity tester. From the heating rate dependences of phase transition temperatures, the activation energy was derived. The obtained values of the Avrami indexes indicate that a two dimension growth crystallization mechanism is responsible for the amorphous-crystalline transformation of Sb2Te3 phase change thin films. Although phase transition of Sb2Te3 thin film is confirmed to be continuous in a larger temperature range, but short laser pulse can easily trigger its crystallization process and form clear and confined crystalline marks.
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Fengxiao Zhai, Yang Wang, Yiqun Wu, and Fuxi Gan "Phase transition kinetics of Sb2Te3 phase change thin films", Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71251W (19 March 2009); https://doi.org/10.1117/12.823426
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