19 March 2009 Array with phase change material Si2Sb2Te5 fabricated by UV-imprint lithography
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Proceedings Volume 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage; 71251X (2009) https://doi.org/10.1117/12.820901
Event: Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 2008, Wuhan, China
Abstract
High-density phase change material (PCM) array is considered to be an efficient method to decrease operation voltage and power of phase change random access memory (PCRAM). In the paper, the Si2Sb2Te5 (SST) array was fabricated by UV-imprint lithography (UV-IL) and the memory array with 18M/Inch2 were constructed. Structural transformation of SST film in heating process was in situ studied by using time-resolved X-ray diffraction. The threshold current and threshold voltage for SST based memory cell are 9.9μA and 0.23V, respectively. After 20ns pulse width inspired, Set/Reset switching operation was achieved and the resistance ratio reached 34. The results show that the SST have potential application in the low-voltage, high-speed storage. The outstanding performance of SST and the new structure enables it to become the new storage devices.
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Yanbo Liu, Xiaoming Niu, Zhitang Song, Guoquan Min, Weimin Zhou, Jing Zhang, Ting Zhang, Bo Liu, YongZhong Wan, Xiaoli Li, Jianping Zhang, Songlin Feng, "Array with phase change material Si2Sb2Te5 fabricated by UV-imprint lithography", Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71251X (19 March 2009); doi: 10.1117/12.820901; https://doi.org/10.1117/12.820901
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