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30 December 2008 Electron spin resonance spectroscopy investigation of ion beam sputtered HfO2 and SiO2 thin films
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Abstract
In this work we use electron spin resonance (ESR) spectroscopy to investigate defects in dual ion beam sputtered HfO2 and SiO2 films. "As-grown" SiO2 films exhibit an ESR feature consistent with an E' center associated with an oxygen vacancy previously reported. A similar feature with axial symmetry is seen in HfO2 films. The defect giving rise to the HfO2 ESR feature is distributed throughout the film. In addition, post process annealing of HfO2 and SiO2 films greatly reduces these defects.
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B. Langdon, D. Patel, E. Krous, P. Langston, C. S. Menoni, and Michelle Shinn "Electron spin resonance spectroscopy investigation of ion beam sputtered HfO2 and SiO2 thin films", Proc. SPIE 7132, Laser-Induced Damage in Optical Materials: 2008, 71320M (30 December 2008); https://doi.org/10.1117/12.804459
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