11 November 2008 A new type of mode power characteristics of extremely short external cavity semiconductor laser
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Proceedings Volume 7134, Passive Components and Fiber-based Devices V; 71340Z (2008) https://doi.org/10.1117/12.803069
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
In this paper, the total output power features and the mode power characteristics of the extremely short external cavity semiconductor lasers (ESECSLs) have been investigated experimentally and theoretically, and a new type of variation of ESECSL's mode power is reported. The results show that with the variation of the external cavity length at the order of lasing wavelength, the total output power and the mode power of ESECSLs will hop periodically, and the different mode presents diverse power characteristics. Especially, some modes, locating at the material gain center of ESECSL, present unique double peak characteristics. Moreover, the primarily theoretical simulations and the physics explanation about these double peak characteristics have been given. The theoretical simulation results agree well with the experimental results. These new type characteristics of ESECSL's mode power may be useful in improving the sensitivity of all-optical sensors and developing the new type of optical data read-write head.
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Jia-Gui Wu, Jia-Gui Wu, Zheng-Mao Wu, Zheng-Mao Wu, Guang-Qiong Xia, Guang-Qiong Xia, Xiao-Dong Lin, Xiao-Dong Lin, Tao Deng, Tao Deng, } "A new type of mode power characteristics of extremely short external cavity semiconductor laser", Proc. SPIE 7134, Passive Components and Fiber-based Devices V, 71340Z (11 November 2008); doi: 10.1117/12.803069; https://doi.org/10.1117/12.803069
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