Translator Disclaimer
11 November 2008 Dielectric properties of GaAs in terahertz wave
Author Affiliations +
Proceedings Volume 7134, Passive Components and Fiber-based Devices V; 71343P (2008)
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
The terahertz dielectric properties of GaAs were tested in the frequency range extending from 0.23 THz to 0.375 THz by using backward-wave oscillator (BWO). The terahertz refractive indices, the absorption spectra and the dielectric functions of various resistivity GaAs were measured and compared. The experimental results indicate that the absorption coefficient of the GaAs is decreased with the frequency increasing and its least absorption coefficient equals 3.87x10-4 cm-1. Our results demonstrate that the applicability of the backward-wave oscillator THz absorption spectroscopy to GaAs characteristic analysis by calculating the absorption spectra. This work establishes the basic spectra data for GaAs is very significative to design the high efficiency terahertz wave antenna.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiusheng Li, Xiaoli Zhao, and Jianrui Li "Dielectric properties of GaAs in terahertz wave", Proc. SPIE 7134, Passive Components and Fiber-based Devices V, 71343P (11 November 2008);

Back to Top