18 November 2008 Quantum-dot coupled tensile-strain quantum-well polarization insensitive semiconductor optical amplifier
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71350A (2008); doi: 10.1117/12.802811
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
The optical gain of quantum-dot (QD) semiconductor optical amplifier (SOA) is usually seriously dependent on polarization, we propose QD coupled to tensile-strained quantum-well (QW) structure to obtain polarization insensitive QD SOA. A polarization-dependent coupled carrier rate equation model and multi-section SOA model are used to study the performance of QD-coupled QW SOA. Gain dependence on polarization is studied, TE gain contribution by QWs and QDs is compared, and carrier distribution competition among QWs and QDs is analyzed. It is shown that polarization insensitive gain can be realized in a relatively wide range of wavelength if QD-coupled tensile-strained QW SOA is properly designed.
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Lirong Huang, Pengfei Zhan, Shuping Fei, Dexiu Huang, "Quantum-dot coupled tensile-strain quantum-well polarization insensitive semiconductor optical amplifier", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350A (18 November 2008); doi: 10.1117/12.802811; https://doi.org/10.1117/12.802811
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KEYWORDS
Quantum wells

Polarization

Neodymium

Semiconductor optical amplifiers

Performance modeling

Nondestructive evaluation

Optoelectronics

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