18 November 2008 Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (001)GaAs by LP-MOCVD
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71350K (2008); doi: 10.1117/12.803222
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
High quality zinc-blende BxGa1-xAs, BxAl1-xAs, BxGa1-x-yInyAs epilayers and relevant MQW structures containing 10- period BGaAs(10nm)/GaAs(50nm) and BGaInAs(10nm)/GaAs(50nm) have been successfully grown on exactly-oriented (001)GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminium, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase triethylboron mole fraction. In this study, the maximum boron composition x of 5.8% and 1.3% was achieved at the same growth temperature of 580°C for bulk BxGa1-xAs and BxAl1-xAs, respectively. 11K photoluminescence (PL) peak wavelength of lattice-matched BxGa1-x-yInyAs epilayer with boron composition of about 4% reached 1.24μm.
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Qi Wang, Xiaomin Ren, Yongqing Huang, Hui Huang, Shiwei Cai, Xia Zhang, "Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (001)GaAs by LP-MOCVD", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350K (18 November 2008); doi: 10.1117/12.803222; https://doi.org/10.1117/12.803222
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KEYWORDS
Boron

Gallium arsenide

Diffraction

Gallium

Atomic force microscopy

Crystals

Indium

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