808nm high-power high-efficiency GaAsP/GaInP laser bars

Ye Wang; Ye Yang; Li Qin; Chao Wang; Di Yao; Yun Liu; Lijun Wang

doi:10.1117/12.803301

18 November 2008 808nm high-power high-efficiency GaAsP/GaInP laser bars

Ye Wang, Ye Yang, Li Qin, Chao Wang, Di Yao, Yun Liu, Lijun Wang

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71350N (2008) https://doi.org/10.1117/12.803301
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

Citation Download Citation

Ye Wang, Ye Yang, Li Qin, Chao Wang, Di Yao, Yun Liu, and Lijun Wang "808nm high-power high-efficiency GaAsP/GaInP laser bars", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350N (18 November 2008); https://doi.org/10.1117/12.803301

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