Abstract
808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the
introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry
and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in
diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High
efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal
conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have
superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower
differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode
laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous
wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high
power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is
25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.
