18 November 2008 The structural and optical properties of high-Al-content AlInGaN epilayers grown by RF-MBE
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71350U (2008) https://doi.org/10.1117/12.804326
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
AlInGaN Quaternary Alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Different Al content AlInGaN quaternary alloys were acquired by changing the Al cell's temperature. The streaky RHEED pattern observed during AlInGaN growth showed the layer-by-layer growth mode. Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN with appropriate Al cell's temperature, could acquire Al/In ratio near 4.7, then could acquire better crystal and optical quality. The samllest X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectivly. There are some cracks and V-defects occur in high-Al/In-ratio AlInGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions. The emission enhancement of the cracked and V-defect regions may be related to the In-segregation.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baozhu Wang, Baozhu Wang, Tao An, Tao An, Huanming Wen, Huanming Wen, Ruihong Wu, Ruihong Wu, Shengbiao An, Shengbiao An, Xiuqing Zhang, Xiuqing Zhang, Xiaoliang Wang, Xiaoliang Wang, "The structural and optical properties of high-Al-content AlInGaN epilayers grown by RF-MBE", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350U (18 November 2008); doi: 10.1117/12.804326; https://doi.org/10.1117/12.804326
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