Paper
18 November 2008 A novel bottom-emitting VCSEL's one-dimension array
Author Affiliations +
Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351E (2008) https://doi.org/10.1117/12.803104
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200&μm,150μm and 100μm-diameterμwith the center spacings of 300μm and 250μm respectively. The maximum power is 880mW at a current of 4A, corresponding to 1KW/cm2 average optical power density. The differential resistance is Ω with a threshold of 0.56A. The novel array is compared with a 300μm-aperture-size single device and a 4*4 2-D array with 50μm element aperture size and 250μm centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power, threshold current, lasing spectra, far-field distribution etc.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinjiang Cui, Yongqiang Ning, Te Li, Yan Zhang, Guangyu Liu, Xing Zhang, Zhenfu Wang, Jingjing Shi, Peng Kong, Li Qin, Yun Liu, and Lijun Wang "A novel bottom-emitting VCSEL's one-dimension array", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351E (18 November 2008); https://doi.org/10.1117/12.803104
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KEYWORDS
Vertical cavity surface emitting lasers

Resistance

Reflectivity

Thermal effects

Free space optics

High power lasers

Mechanics

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