18 November 2008 Compact optical modulator based on carrier induced gain of an InP/InGaAsP micro-disk cavity integrated on SOI
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351I (2008) https://doi.org/10.1117/12.803085
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
A compact electro-optic modulator on silicon-on-insulator is presented. The structure consists of a III-V microdisk cavity heterogeneously integrated on a silicon-on-insulator wire waveguide. By modulating the loss of the active layer included in the cavity through carrier injection, the power of the transmitted light at the resonant wavelength is modulated. ~10 dB extinction ratio and 2.73 Gbps dynamic operation are demonstrated without using any special driving techniques. The results are consistent with the theoretical simulations.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liu Liu, Liu Liu, Joris Van Campenhout, Joris Van Campenhout, Günther Roelkens, Günther Roelkens, Richard Soref, Richard Soref, Dries Van Thourhout, Dries Van Thourhout, Pedro Rojo-Romeo, Pedro Rojo-Romeo, Philippe Regreny, Philippe Regreny, Christian Seassal, Christian Seassal, Jean-Marc Fédéli, Jean-Marc Fédéli, Roel Baets, Roel Baets, "Compact optical modulator based on carrier induced gain of an InP/InGaAsP micro-disk cavity integrated on SOI", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351I (18 November 2008); doi: 10.1117/12.803085; https://doi.org/10.1117/12.803085
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