18 November 2008 Terahertz wave dielectric properties of P-type silicon
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351L (2008) https://doi.org/10.1117/12.802557
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
We have measured the absorption spectrum of three kind resistivity p-type silicons by backward-wave oscillator (BWO).The absorption spectrum is examined and analyzed by least square method. The refractive index, absorption coefficient, and dielectric functions of various resistivity p-type silicons are obtained in the frequency range extending from 0.23 THz to 0.375 THz. The experimental results indicate that the absorption coefficient of the p-type silicons are decreased with the resistivity increase and its least absorption coefficient equals 3.87x10-4 cm-1. Our results demonstrate that the applicability of the backward-wave oscillator THz absorption spectroscopy to p-type silicon characteristic analysis by calculating the absorption spectra. This work establishes the basic spectra data for the various resistivity ptype silicons are very significative to design the terahertz waveguide with low loss.
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Jiusheng Li, Jiusheng Li, Jianrui Li, Jianrui Li, Xiaoli Zhao, Xiaoli Zhao, } "Terahertz wave dielectric properties of P-type silicon", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351L (18 November 2008); doi: 10.1117/12.802557; https://doi.org/10.1117/12.802557

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