Translator Disclaimer
Paper
18 November 2008 The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon
Author Affiliations +
Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351N (2008) https://doi.org/10.1117/12.803095
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
Photoluminescence of Ar+ implanted porous silicon and porous structure of Ar+-implanted silicon (porous silicon by preanodization ion implantation) at energy of middle-energy (30keV) are investigated to gain insight into the photoluminescence properties and photoluminescence mechanism. The results show that the photoluminescence intensity of Ar+ implanted porous silicon was reduced, which was attributed to the removal of surface oxygen and creation of defects that act as nonradiative recombination; And whether samples were prepared by p-type or n-type silicon wafers, the photoluminescence intensity of porous structure of Ar+-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and oxygen-related defects were increased.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao-yi Lü, Tao Xue, and Zhen-hong Jia "The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351N (18 November 2008); https://doi.org/10.1117/12.803095
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Dislocation density reduction in (101 1 ) GaN at a...
Proceedings of SPIE (February 16 2020)
1.54-um emission enhancement in silicon doped with erbium
Proceedings of SPIE (January 03 1996)
Spectral investigation of porous anodic alumina film
Proceedings of SPIE (January 23 2006)
Buried Oxide Formation By Ion Implantation
Proceedings of SPIE (April 09 1985)

Back to Top