18 November 2008 The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351N (2008) https://doi.org/10.1117/12.803095
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
Photoluminescence of Ar+ implanted porous silicon and porous structure of Ar+-implanted silicon (porous silicon by preanodization ion implantation) at energy of middle-energy (30keV) are investigated to gain insight into the photoluminescence properties and photoluminescence mechanism. The results show that the photoluminescence intensity of Ar+ implanted porous silicon was reduced, which was attributed to the removal of surface oxygen and creation of defects that act as nonradiative recombination; And whether samples were prepared by p-type or n-type silicon wafers, the photoluminescence intensity of porous structure of Ar+-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and oxygen-related defects were increased.
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Xiao-yi Lü, Xiao-yi Lü, Tao Xue, Tao Xue, Zhen-hong Jia, Zhen-hong Jia, "The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351N (18 November 2008); doi: 10.1117/12.803095; https://doi.org/10.1117/12.803095
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