Abstract 100 mm wafer bonding of InP-based structure and silicon-on-insulator wafers is presented with the use of a lowtemperature
(300 °C) O2 plasma-assisted wafer bonding process. An efficient vertical outgassing channels (VOCs) design
is developed to eliminate the fundamental obstacle of interfacial voids in bonding due to intrinsic chemical reactions.
Generated gas species of H2O and H2 can quickly diffuse to VOCs, etched through-holes to buried oxide layer (BOX), and
absorbed by the BOX layer owing to the open network structure and large gas permeability. The interfacial void density is
reduced from 55,093 cm-2 down to 3 cm-2, more than five orders of magnitude reduction for appropriate design of VOCs.
Uniform patterning of VOCs leads to no outgassing "dead zone" across the entire bonding area, and decrease of the
thermal mismatch-induced interfacial strain potentially as well, which both result in the wafer scale-independent bonding.
In addition, we present distributed feedback silicon lasers realized on the hybrid silicon evanescent platform. The laser
operates continuous wave with a single mode output at 1600 nm. A continuous wave (CW) low threshold of 25 mA with a
maximum output power of 5.4 mW is demonstrated at 10 °C. The obtained side mode suppression ratio of 50 dB, 3.6
MHz linewidth, and over 100 nm single mode operation band are comparable to those of commercial III-V DFB devices.
These highly single mode lasers may find applications in computer interconnect.