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18 November 2008 Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351Z (2008) https://doi.org/10.1117/12.804291
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
High efficiency GaN-based light-emitting diodes (LEDs) are demonstrated by a nanoscale epitaxial lateral overgrowth (NELO) method on a SiO2 nanorod-array patterned sapphire substrate (NAPSS). The SiO2 NAPSS was fabricated by a self-assembled Ni nano clusters and reactive ion etching. The average diameter and density of the formed SiO2 nanorod-array was about 100 to 150 nm and 3 x 109 cm-2. The transmission electron microscopy images suggest that the voids between SiO2 nanorods and the stacking faults introduced during the NELO of GaN can effectively suppress the threading dislocation density. The output power and external quantum efficiency of the fabricated LED by NELO method on NAPSS were enhanced by 52% and 56% respectively, compared to those of a conventional LED. The improvements originated from both the enhanced light extraction assisted by the NAPSS, and the reduced dislocation densities using the NELO method.
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C. H. Chiu, C. L. Chao, M. H. Lo, Y. J. Cheng, H. C. Kuo, P. C. Yu, T. C. Lu, S. C. Wang, and K. M. Lau "Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351Z (18 November 2008); https://doi.org/10.1117/12.804291
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