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18 November 2008 High power diode laser with beam coupling
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71352B (2008)
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
As the increasing applications of the semiconductor lasers in the laser processing, the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness, and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper, it mainly introduces the beam shaping and the technology of spatial coupling, polarization coupling, and wavelength coupling. The coupling key elements are presented and indicated. Finally, the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase,d which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm. By two 808nm diode laser coupling effeice the efficiency of 60% can be achieved after focusing to the beam size of 2x2mm2.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuanyuan Gu, Lijun Wang, Guangzhi Feng, Xiaonan Shan, Honghe Yin, and Yun Liu "High power diode laser with beam coupling", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71352B (18 November 2008);


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