18 November 2008 Femtosecond pulse generation in a C-band quantum dot laser
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71352L (2008) https://doi.org/10.1117/12.803564
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
We have demonstrated femtosecond pulses from a passive single-section monolithic InAs/InP quantum-dot (QD) semiconductor laser with the active length of 456 µm and the ridge width of 2.5 µm in the C-band wavelength range from 1528 nm to 1565 nm. The transform-limited Gaussian-pulses are generated at the 92-GHz repetition rate with the 312-fs pulse duration without any pulse compression scheme. The average output power is larger than 13.2 mW for the injection current of 60 mA. And the lasing threshold current and external differential quantum efficiency are 17.2 mA and 38%, respectively. The mode-beating linewidth of the proposed QD mode-locked laser (MLL) was measured less than 20 KHz. We have interpreted that four-wave-mixing (FWM) process and other nonlinear effects within the QD waveguide gain materials make the major contributions to lock the phase the longitudinal modes of the QD Fabry-Perot cavity together to achieve this strong self-pulsation process.
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Z. G. Lu, Z. G. Lu, J. R. Liu, J. R. Liu, S. Raymond, S. Raymond, P. J. Poole, P. J. Poole, P. J. Barrios, P. J. Barrios, D. Poitras, D. Poitras, } "Femtosecond pulse generation in a C-band quantum dot laser", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71352L (18 November 2008); doi: 10.1117/12.803564; https://doi.org/10.1117/12.803564

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