18 November 2008 Theoretical and experimental study of ASE-injection wavelength-locked Fabry-Perot laser diode
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 713536 (2008) https://doi.org/10.1117/12.802833
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
The influence of bias current and ASE injection power on the side-mode suppression ratio (SMSR), relative intensity noise (RIN) and gain of the ASE-injection wavelength-locked Fabry-Perot laser diode (F-P LD) have been studied experimentally. Results show that the SMSR and RIN depend on the bias current for a given ASE, and there is different optimum bias current in terms of the SMSR and RIN. With the influence of detailed spontaneous recombination mechanism and its temperature dependence and the temperature- and wavelength-dependent material gain, we propose a static model of the wavelength-locked F-P LD based on nonlinear etalon theory. The temperature dependence of gain and saturation power of wavelength-locked F-P LD is analyzed theoretically with the model. The results show that the saturation power increases as we increase the operation temperature, while it decreases as we increase the reflectivity of front facet.
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Hongyun Meng, Hongyun Meng, Chang-Hee Lee, Chang-Hee Lee, } "Theoretical and experimental study of ASE-injection wavelength-locked Fabry-Perot laser diode", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713536 (18 November 2008); doi: 10.1117/12.802833; https://doi.org/10.1117/12.802833
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