Photoluminescence properties of rare-earth doped Si-based films materials

Qingnian Wang D.D.S.; Meiling Yuan D.D.S.; Xinli Leng

doi:10.1117/12.803073

18 November 2008 Photoluminescence properties of rare-earth doped Si-based films materials

Qingnian Wang D.D.S., Meiling Yuan D.D.S., Xinli Leng

Author Affiliations +

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71353D (2008) https://doi.org/10.1117/12.803073
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by Nd by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to the dose of implantation and to the temperature of thermal annealing.The above samples were treated by anodization method. The PL spectra of porous samples which were treated by HNO₃ were measured. The results show light emission efficiency of the porous samples that were treated by electro-chemical anodization etch and HNO₃ is higher than those of ordinary PS samples under the same measuring conditions.

Citation Download Citation

Qingnian Wang D.D.S., Meiling Yuan D.D.S., and Xinli Leng "Photoluminescence properties of rare-earth doped Si-based films materials", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353D (18 November 2008); https://doi.org/10.1117/12.803073

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