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18 November 2008 Investigation of ultra-fast accurately synchronization control GaAs photoconductive switches
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71353S (2008) https://doi.org/10.1117/12.803351
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
Experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nanosecond serial laser pulses were reported. The switches were insulated by solid multi-layer transparent dielectrics. Jitter-free electrical pulses with steady voltage amplitude from the 0.5 mm-gap GaAs switches were observed. Its change of amplitude was less than 1.1%, the triggered jitter-time was less than 10ps, and pulse width was up to sub-nanosecond. The Jitter-free and steady speciality of electrical pulses from the photoconductive semiconductor switch was analyzed. It was indicated that ultra-fast electrical pulse with steady voltage amplitude and pico-second triggered jitter-time can be obtained by controlling switch trigger condition and optimizing switch design.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deming Ma, Wei Shi D.D.S., Hong Xue, and Xiaolong Li "Investigation of ultra-fast accurately synchronization control GaAs photoconductive switches", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353S (18 November 2008); https://doi.org/10.1117/12.803351
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