18 November 2008 Pulse-LDA-pumped passively Q-switched Nd:YVO4 laser with GaAs as saturable absorber
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71353W (2008) https://doi.org/10.1117/12.803419
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
A passively Q-switched pulse-LDA (laser diode array)-pumped Nd:YVO4 laser using As+ implanted GaAs as the saturable absorber is demonstrated. In the experiment, a Q-switching pulse width 7ns with a pulse energy 23.5μJ is achieved which, to our knowledge, is the shortest pulse width in a passively Q-switched Nd:YVO4 laser using GaAs as saturable absorber. The laser emits only one Q-switching pulse during each pump-pulse time with a Q-switching efficiency of 26.8%. We also investigate the characteristics of the Q-switched pulse by adjusting the pumping pulse energy, pulse width and pulse repetition rate respectively. The experimental results are discussed as well in the paper.
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Xiaojuan Liu, Shenggui Fu, "Pulse-LDA-pumped passively Q-switched Nd:YVO4 laser with GaAs as saturable absorber", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353W (18 November 2008); doi: 10.1117/12.803419; https://doi.org/10.1117/12.803419


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