18 November 2008 High power 1064nm laser diode array and measuring chip temperature based on emitting spectra
Author Affiliations +
Proceedings Volume 7135, Optoelectronic Materials and Devices III; 713541 (2008) https://doi.org/10.1117/12.803585
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle, the average driving power in the laser chip is quite low, so the heating effect cemiconductor laser is very small, using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/ K
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangpeng Wang, Xiangpeng Wang, Zaijin Li, Zaijin Li, Yun Liu, Yun Liu, Ye Wang, Ye Wang, Di Yao, Di Yao, Lijun Wang, Lijun Wang, } "High power 1064nm laser diode array and measuring chip temperature based on emitting spectra", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713541 (18 November 2008); doi: 10.1117/12.803585; https://doi.org/10.1117/12.803585
PROCEEDINGS
6 PAGES


SHARE
Back to Top