18 November 2008 Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
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Proceedings Volume 7138, Photonics, Devices, and Systems IV; 713813 (2008) https://doi.org/10.1117/12.818007
Event: Photonics, Devices, and Systems IV, 2008, Prague, Czech Republic
Abstract
Mid-infrared photovoltaic detector (PD) designed on the base of a type II p-InAs/p-GaSb asymmetric heterostructure with a deep AlSb/InAsSb/AlSb quantum well (QW) at the interface is reported. The heterostructures containing the single QW were grown by LP-MOVPE. Transport, electroluminescent and photoelectrical properties of these structures were investigated. Intense both positive and negative electroluminescence was observed in the spectral range 3-4 µm above room temperature (300-400 K). Spectral response in the mid-infrared range 1.2-3.6 μm was obtained at temperatures T=77-300 K. High quantum efficiency η=0.6-0.7 responsivity Sλ=1.4-1.7 A/W and detectivity Dλ* =3.5×1011 cm Hz1/2w-1 were achieved at 77 K. Such QW PDs are suitable for heterodyne spectroscopy and free space communication using quantum cascade lasers as well as for gas analysis and ecological monitoring applications.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. P. Mikhailova, M. P. Mikhailova, I. A. Andreev, I. A. Andreev, K. D. Moiseev, K. D. Moiseev, E. V. Ivanov, E. V. Ivanov, N. D. Stoyanov, N. D. Stoyanov, Yu. P. Yakovlev, Yu. P. Yakovlev, E. Hulicius, E. Hulicius, A. Hospodková, A. Hospodková, J. Pangrác, J. Pangrác, K. Melichar, K. Melichar, T. Simecek, T. Simecek, } "Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range", Proc. SPIE 7138, Photonics, Devices, and Systems IV, 713813 (18 November 2008); doi: 10.1117/12.818007; https://doi.org/10.1117/12.818007
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