18 November 2008 Dynamics of layer crystal light absorption and the formation of optical bistability
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Proceedings Volume 7138, Photonics, Devices, and Systems IV; 71381V (2008) https://doi.org/10.1117/12.818060
Event: Photonics, Devices, and Systems IV, 2008, Prague, Czech Republic
Abstract
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2Hpolytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.
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C. Yu. Zenkova, C. Yu. Zenkova, } "Dynamics of layer crystal light absorption and the formation of optical bistability", Proc. SPIE 7138, Photonics, Devices, and Systems IV, 71381V (18 November 2008); doi: 10.1117/12.818060; https://doi.org/10.1117/12.818060
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