Ultrafast properties of multilayer heterostructures based on GaAs/(AlGa)xOy

M. V. Ermolenko; S. A. Tikhomirov; V. V. Stankevich; O. V. Buganov; S. V. Gaponenko; A. S. Shulenkov

doi:10.1117/12.818063

18 November 2008 Ultrafast properties of multilayer heterostructures based on GaAs/(AlGa)_XO_Y

M. V. Ermolenko, S. A. Tikhomirov, V. V. Stankevich, O. V. Buganov, S. V. Gaponenko, A. S. Shulenkov

Proceedings Volume 7138, Photonics, Devices, and Systems IV; 71381Y (2008) https://doi.org/10.1117/12.818063
Event: Photonics, Devices, and Systems IV, 2008, Prague, Czech Republic

Abstract

Nonlinear optical properties of GaAs/(AlGa)_XO_Y heterostructures using interband excitation by 150 fs laser pulses is reported. A considerable wideband nonlinear response is observed. Mean decay time for nonlinear reflection in heterostructures ranges from 1.5 to 3.5 ps. The shift of the GaAs energy-band structure caused by the high tensions in GaAs/(AlGa)_XO_Y structure is observed.

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M. V. Ermolenko, S. A. Tikhomirov, V. V. Stankevich, O. V. Buganov, S. V. Gaponenko, and A. S. Shulenkov "Ultrafast properties of multilayer heterostructures based on GaAs/(AlGa)_XO_Y", Proc. SPIE 7138, Photonics, Devices, and Systems IV, 71381Y (18 November 2008); https://doi.org/10.1117/12.818063

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