4 December 2008 Current benchmarking results of EUV resist at Selete
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Proceedings Volume 7140, Lithography Asia 2008; 714008 (2008); doi: 10.1117/12.804665
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
The main challenge facing the implementation of EUV resist and processing has been concurrent achievement of high sensitivity, high resolution, and low line width roughness (LWR). In order to improve the performance of EUV resist, Selete is actively pursuing its benchmarking. The results from this benchmarking were found to be as follows: Esize improved with the increasing capability of EUV pattern exposure. Sensitivity improved during this year. Resolution is found to be almost sufficient for 32-nm half-pitch (hp), but not quite good enough for 22-nm hp. Resist blur of the resist, which marked good score in benchmarking, is found to be 10nm to 11nm. LWR is still far from its target value.
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Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Hiroaki Oizumi, Toshiro Itani, "Current benchmarking results of EUV resist at Selete", Proc. SPIE 7140, Lithography Asia 2008, 714008 (4 December 2008); doi: 10.1117/12.804665; https://doi.org/10.1117/12.804665
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KEYWORDS
Line width roughness

Extreme ultraviolet

Convolution

Lithographic illumination

Extreme ultraviolet lithography

Scanning electron microscopy

Electroluminescence

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