We have investigated three candidate lithography technologies for 2x nm HP generation and beyond for the
application to LSI, namely, double patterning technology (DPT), EUV lithography (EUVL) and nanoimprint
lithography (NIL). In terms of lithography unit technologies and lithography integration technologies, each technology
has advantages and disadvantages from the viewpoint of difficulty, development resources, extendability, process cost,
and so on. Using a development matrix consisting of development steps and development stages, we clarified the
current development status for each technology. This matrix indicates the items for which technological critical
breakthroughs are necessary to realize LSI production. From this study, we made three lithography development
scenarios for the feasibility stage and the production stage for 2x nm HP generation and beyond.