4 December 2008 Electron beam charging of a SiO2 layer on Si: a comparison between Monte Carlo-simulated and experimental results
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Proceedings Volume 7140, Lithography Asia 2008; 71400X (2008); doi: 10.1117/12.804461
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Recently, a unique capability in highly sensitive detection of residue defects in photoresist patterns on a metal hard mask has been verified experimentally [T. Hayashi et al., Proc. SPIE, 6922 (2008) 6922-129]. In order to reveal the mechanism for the new defect inspection technique, the charging up induced by 300 eV - 2000 eV electron bombardment of thin insulating layers (SiO2, ~tens of nm) on Si is studied by using a self-consistent Monte-Carlo simulation of the transport of a primary electron and secondary electrons (SE) and the generation of an electric field due to the charges in the layer. The calculation is compared with the contrast changes in the SEM images of thermally oxidized layers (20~100 nm) on a Si wafer. Low-energy EB (or thick SiO2 layer) causes the positive charging of the layer, whereas the high-energy EB, which penetrates under thin SiO2 layer, relaxes the charging of the layer due to electron-hole recombination in Si. The thickness dependence of the SE yield for low- and high-energies is investigated, which explains the observed changes in the SEM images of the insulating layers on Si.
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Kensuke Inai, Kaoru Ohya, Hideaki Kuwada, Ryosuke Kawasaki, Misako Saito, Kaoru Fujihara, Teruyuki Hayashi, Jack Jau, Kenichi Kanai, "Electron beam charging of a SiO2 layer on Si: a comparison between Monte Carlo-simulated and experimental results", Proc. SPIE 7140, Lithography Asia 2008, 71400X (4 December 2008); doi: 10.1117/12.804461; https://doi.org/10.1117/12.804461




Scanning electron microscopy

Monte Carlo methods

Defect inspection

Electron beams

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