4 December 2008 Extending KrF lithography beyond 80nm with the TWINSCAN XT:1000H 0.93NA scanner
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Proceedings Volume 7140, Lithography Asia 2008; 71401B (2008) https://doi.org/10.1117/12.805381
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
KrF lithography is nowadays widely used for volume production spanning many device layers ranging from front-end 90nm to mid- & back-end layers in 45nm and 32nm ITRS imaging nodes. In this paper we discuss the addition of the new high-NA XT:1000H TWINSCAN(TM)scanning exposure tool to the KrF portfolio. We discuss advances in the system design and elaborate on its imaging and overlay performance. It is shown that stable tool performance supports 80nm resolution volume manufacturing. Extendibility with polarization towards sub-80nm is also addressed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wim de Boeij, Wim de Boeij, Gerald Dicker, Gerald Dicker, Marten de Wit, Marten de Wit, Frank Bornebroek, Frank Bornebroek, Mark Zellenrath, Mark Zellenrath, Harm-Jan Voorma, Harm-Jan Voorma, Bart Smeets, Bart Smeets, Rene Toussaint, Rene Toussaint, Bart Paarhuis, Bart Paarhuis, Marteijn de Jong, Marteijn de Jong, Dirk Hellweg, Dirk Hellweg, Klaus Kornitzer, Klaus Kornitzer, } "Extending KrF lithography beyond 80nm with the TWINSCAN XT:1000H 0.93NA scanner", Proc. SPIE 7140, Lithography Asia 2008, 71401B (4 December 2008); doi: 10.1117/12.805381; https://doi.org/10.1117/12.805381
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