4 December 2008 A methodology for double patterning compliant split and design
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Proceedings Volume 7140, Lithography Asia 2008; 71401X (2008) https://doi.org/10.1117/12.804697
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
Double Patterning allows to further extend the use of water immersion lithography at its maximum numerical aperture NA=1.35. Splitting of design layers to recombine through Double Patterning (DP) enables an effective resolution enhancement. Single polygons may need to be split up (cut) depending on the pattern density and its 2D content. The split polygons recombine at the so-called 'stitching points'. These stitching points may affect the yield due to the sensitivity to process variations. We describe a methodology to ensure a robust double patterning by identifying proper split- and design- guidelines. Using simulations and experimental data, we discuss in particular metal1 first interconnect layers of random LOGIC and DRAM applications at 45nm half-pitch (hp) and 32nm hp where DP may become the only timely patterning solution.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vincent Wiaux, Vincent Wiaux, Staf Verhaegen, Staf Verhaegen, Fumio Iwamoto, Fumio Iwamoto, Mireille Maenhoudt, Mireille Maenhoudt, Takashi Matsuda, Takashi Matsuda, Sergei Postnikov, Sergei Postnikov, Geert Vandenberghe, Geert Vandenberghe, } "A methodology for double patterning compliant split and design", Proc. SPIE 7140, Lithography Asia 2008, 71401X (4 December 2008); doi: 10.1117/12.804697; https://doi.org/10.1117/12.804697
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