4 December 2008 Pattern freezing process free litho-litho-etch double patterning
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Proceedings Volume 7140, Lithography Asia 2008; 71402H (2008) https://doi.org/10.1117/12.804710
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
Double patterning based on existing ArF immersion lithography is considered the most viable option for 32nm and below CMOS node. Most of double patterning approaches previously described require intermediate process steps like as hard mask etching, spacer material deposition, and resist freezing. These additional steps can significantly add to the cost of production applied the double patterning. In this paper, pattern freezing free litho-litho-etch double patterning process is investigated to achieve a narrow pitch imaging without the intermediate processing steps. Pattern freezing free litho-litho-etch double patterning utilizing positive-positive resist combination demonstrated composite pattern generation.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomoyuki Ando, Tomoyuki Ando, Masaru Takeshita, Masaru Takeshita, Ryoich Takasu, Ryoich Takasu, Yasuhiro Yoshii, Yasuhiro Yoshii, Jun Iwashita, Jun Iwashita, Shogo Matsumaru, Shogo Matsumaru, Sho Abe, Sho Abe, Takeshi Iwai, Takeshi Iwai, } "Pattern freezing process free litho-litho-etch double patterning", Proc. SPIE 7140, Lithography Asia 2008, 71402H (4 December 2008); doi: 10.1117/12.804710; https://doi.org/10.1117/12.804710
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